Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

Abstract

The growth of 4H-SiC epilayers on 1.28o off-cut substrates is reported in this study and comparison when using standard 4o and 8o off-cut substrates is added. Growth at high temperature is needed for the polytype stability, whereas low C/Si is requested to decrease both triangular defects density and roughness of the grown surface. An in-situ etching with Si rich ambient allows the growth of epilayers with specular surface. The formation of Si droplets can be observed on the grown surfaces when lowering the growth temperature and appears first for the high off-cut angle.