Affiliation:
1. University of Warwick
2. Campus Universidad Autonóma de Barcelona
Abstract
This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type material, the main aim being to examine their ruggedness under high temperature conditions. XRD, FIB-TEM and SEM are techniques that have been utilized to examine the microstructure and interface properties respectively. A detailed physical study revealed the presence of a crystalline hexagonal Ti layer orientated in the same direction as the 4H-SiC epitaxial layer. This factor seems to be important in terms of electrical performance, having the lowest measured specific contact resistivity of 1x10-6Ωcm2. We attribute this to the optimized formation of Ti3SiC2at the metal/SiC interface. An initial high temperature study shows thermionic emission occurring across the metal/semiconductor junction.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
19 articles.
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