Terraces at ohmic contact in SiC electronics: Structure and electronic states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4729074
Reference46 articles.
1. Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials
2. Ohmic Contact Behavior of Carbon Films on SiC
3. Ohmic contact formation mechanism of Ni on n-type 4H–SiC
4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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