Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti
Author:
Affiliation:
1. NASA Glenn Research Center, 21000 Brookpark Road, Cleveland, Ohio 44135, USA
2. Vantage Partners, LLC, 21000 Brookpark Road, Cleveland, Ohio 44135, USA
Funder
National Aeronautics and Space Administration (NASA)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4968572
Reference42 articles.
1. Annealing of Ion Implantation Damage in SiC Using a Graphite Mask
2. Ion-implantation in bulk semi-insulating 4H–SiC
3. Defect annealing in ion implanted silicon carbide
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3. Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing;Materials Science in Semiconductor Processing;2022-11
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