Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry-Reference-Cited by-同舟云学术

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Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Published:2018-09-12 Issue: Volume: Page:
ISSN:
Container-title:Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
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Author:

Sharma Yogesh K.

Publisher

InTech

Link

http://www.intechopen.com/download/pdf/62522

Reference56 articles.

1. Pfann WG, Scaff JH. The p-germanium transistor. Proceedings of the IRE. 1950;38(10):1151-1154

2. Valdes LB. Effect of electrode spacing on the equivalent base resistance of point-contact transistors. Proceedings of the IRE. 1952;40(11):1429-1434

3. Ball JA. The Harvard minicorrelator. IEEE Transactions on Instrumentation and Measurement. 1973;22(2):193-196

4. Lécuyer C. Making Silicon Valley: Innovation and the Growth of High Tech. Cambridge, Massachusetts, USA; MIT Press; 2006. pp. 1930-1970

5. O'Mara W, Herring RB, Hunt LP. Handbook of Semiconductor Silicon Technology. Park Ridge, NJ, USA: Noyes Publications; 1990

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