Abstract
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% in ON-resistance, RON (1.52 to 0.97 to Ω·mm), as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a VBV of (VBV > 30 V) and an IR of (IR < 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits’ applications. The paper begins with a brief outline of the basic Schottky-contact diode operation. A series resistance analysis of the diode studied in this project is discussed. The small signal equivalent circuit of the Schottky-contact diode is presented. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. DC, RF, and low frequency C-V measurement techniques and measurements to characterize the diodes are outlined. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I-V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented.
Funder
Cardiff University Institutional OA Fund
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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