Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures

Author:

Haasmann Daniel1,Dimitrijev Sima1,Han Ji Sheng1,Iacopi Alan1

Affiliation:

1. Griffith University

Abstract

In an attempt to significantly reduce the amount of nitric oxide (NO), commonly used to improve the quality of gate oxides on 4H–SiC, a series of alternative gate oxidation processes using a combination of O2and NO gas mixtures at low partial pressures were investigated. The properties of 4H–SiC/SiO2interfaces on n-type MOS capacitors were examined by the measurement of accumulation conductances over a range of frequencies. Oxide integrity was evaluated by current–voltage measurements and by the extraction of the conduction band offset barrier heights through Fowler–Nordheim (F–N) analysis. A notable reduction of accumulation conductance, indicating a reduction of near-interface traps (NITs), was observed over all measured frequencies for oxidation processes containing NO with a partial-pressure of only 2%. Gate oxides grown in mixture of O2and NO at low-partial-pressures demonstrated a considerable improvement of dielectric properties, increasing the barrier height to near theoretical values.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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