The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

Abstract

We grew epitaxial layers on 3-inch epitaxial wafers with a vicinal off-angle, using a horizontal hot-wall chemical vapor deposition system that had a reactor capacity of 3 x 150 mm. Uniformity (σ/mean) of thickness and carrier concentration as small as 1.7% and 5.6%, respectively, were successfully obtained. We succeeded in decreasing triangular surface defects and polytype inclusions by increasing the growth temperature and lowering the C/Si ratio. In addition, I-V characteristics of Schottky barrier diodes on an epitaxial layer showed that a high blocking voltage of 960 V and a low leakage current of less than 1 x 10-6 A/cm2 were obtained with a yield of 78%.