Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle-Reference-Cited by-同舟云学术

Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle

Published:2014-09 Issue: Volume:401 Page:673-676
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Masumoto Keiko,Tamura Kentaro,Kudou Chiaki,Nishio Johji,Ito Sachiko,Kojima Kazutoshi,Ohno Toshiyuki,Okumura Hajime

Funder

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

2. Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles

3. Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction

4. K. Tamura, M. Sasaki, C. Kudou, H. Sako, M. Kitabatake, K. Kojima, Proceedings of the Ext. Abstract 21st Meeting on SiC and Related Wide Bandgap Semiconductors, 2012, p. 6 [in Japanese].

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