Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates

Abstract

Bulk-like 3C-SiC was grown on 1.2 degrees low off-axis 6H-SiC substrates using a sublimation epitaxy technique. The effects of temperature ramp-up and increase in layer thickness on the 3C-SiC domain formation were explored. The temperature ramp-up had no significant effect on the domain size. The domain size was considerably increased and the crystal quality was significantly improved by increasing the thickness of the layer towards bulk-like material. Average full width at half maximum values of 149 arcsec and 65 arcsec were measured in samples with thicknesses of 305 µm and 1080 µm, respectively, at a footprint of 1x3 mm2. This result implies that heteropeitaxial growth of 3C-SiC on low off-axis 6H-SiC substrates by a sublimation method can be used to prepare 3C-SiC seeds or can be further developed for growth of bulk 3C-SiC material.