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Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

  • Published:2012-01 Issue:1 Volume:67 Page:300-302
  • ISSN:0167-577X
  • Container-title:Materials Letters
  • language:en
  • Short-container-title:Materials Letters

Author:

Hens P.,Jokubavicius V.,Liljedahl R.,Wagner G.,Yakimova R.,Wellmann P.,Syväjärvi M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Nucleation and growth of 3C-SiC single crystals from the vapor phase;Chaussende;Mater Sci Forum,2009

2. Chapter in encyclopedia — the Comprehensive Semiconductor Science & Technology (SEST);Syväjärvi,2011

3. Sublimation growth and structural characterization of 3C-SiC ON hexagonal and cubic SiC seeds;Vasiliauskas;Mater Sci Forum,2010

4. How to grow 3C-SiC single domain on α-SiC(0001) by vapor–liquid–solid mechanism;Soueidan;Mater Sci Forum,2007

5. Structural improvement in sublimation epitaxy of 4H-SiC;Syväjärvi;J Appl Phys,2000

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1. Scalable synthesis of 2D materials;2D Materials for Electronics, Sensors and Devices;2023

2. Review of Sublimation Growth of SiC Bulk Crystals;Materials Science Forum;2022-05-31

3. Status of 3 C ‐ SiC Growth and Device Technology;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. Deciphering water-solid reactions during hydrothermal corrosion of SiC;Acta Materialia;2021-05

5. Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications;Semiconductor Science and Technology;2021-04-06
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