3C-SiC Heteroepitaxy on Hexagonal SiC Substrates-Reference-Cited by-同舟云学术

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

Published:2013-01 Issue: Volume:740-742 Page:257-262
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Henry Anne¹^ORCID,Li Xun¹,Jacobson Henrik¹,Andersson Sven¹,Boulle Alexandre²,Chaussende Didier³^ORCID,Janzén Erik¹

Affiliation:

1. Linköping University

2. Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)

3. UMR CNRS 5628, INP Grenoble-MINATEC

Abstract

The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.257.pdf

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