Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Author:

Jarašiūnas Kęstutis1,Ščajev Patrik1,Malinauskas Tadas1,Kato Masashi2,Ivakin Evgenii3,Nesladek Milos4,Haenen Ken4,Özgür Ümit5,Morkoç Hadis5

Affiliation:

1. Vilnius University

2. Nagoya Institute of Technology

3. National Academy of Sciences

4. Hasselt University

5. Virginia Commonwealth University

Abstract

Optical monitoring of diffusivity in wide bandgap semiconductors was performed by using a picosecond light-induced transient grating technique. The bandgap renormalization and carrier-carrier scattering manifested itself at room temperature as two-fold decrease of the ambipolar diffusion coefficient Da in cubic SiC and 5-fold decrease of Da in diamond at excess carrier density N > 1017cm-3, while for GaN the impact was observed only at T 19cm-3, the plasma degeneracy led to enhanced Davalues in SiC and GaN and compensated the diffusivity decrease in diamond.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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