Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer-Reference-Cited by-同舟云学术

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Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Published:2021-07-01 Issue:7 Volume:10 Page:074004
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wang Weilei^ORCID,Liu Weili,Song Zhitang

Funder

Shanghai Sailing Program

Science and Technology Council of Shanghai

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ac12de/pdf

Reference26 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond

3. Ionization rates and critical fields in 4H silicon carbide

4. Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

5. A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of SiO2@MnO2 composite abrasives and their performance in chemical-mechanical polishing of SiC substrates;Ceramics International;2024-10

2. Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal;Solid State Phenomena;2024-08-22

3. Sustainable Electrochemical Mechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte;Applied Surface Science;2024-08

4. Mechanical behavior of cavity and dislocation evolution induced by interfacial debonding of Cu/SiC composites;Journal of Materials Science;2024-01-26

5. Oxidation mechanism of 4H-SiC in slurry-less ECMP with weak alkaline electrolyte;CIRP Annals;2024

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