Characterization of SiO<sub>2</sub>/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET-Reference-Cited by-同舟云学术

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET

Published:2014-02 Issue: Volume:778-780 Page:993-996
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ohtsuka Kenichi¹,Hino Shiro¹,Nagae Akemi¹,Tanaka Rina¹,Kagawa Yasuhiro¹,Miura Naruhisa¹,Nakata Shuhei¹

Affiliation:

1. Mitsubishi Electric Corporation

Abstract

MOS interface traps are characterized by device simulation on the basis of temperature dependence of lateral MOS-TEG devices on the same Al-implanted p-type region as vertical device. The simulation shows fairly large Dit in SiO2/4H-SiC interface, corresponding to the suggested trap density inside the conduction band. Temperature dependence of on-resistance is explained by application of evaluated interface properties to calculation of current voltage properties of vertical DMOSFET.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.993.pdf

Reference13 articles.

1. S. Potbhare, G. Pennington, N. Goldsman, A. Lelis, D. Habersat, F. B. McLean and J. M. McGarrity, Mater. Sci. Forum 527-529 (2006) 1321.

2. S. Potbhare, N. Goldsman, A. Lelis, J. M. McGarrity and F. B. McLean, IEEE Electron. Devices 55 (2008) (2029).

3. A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman and P. M. Mooney, Mater. Sci. Forum 645-648 (2010) 499.

4. H. Naik, and T. P. Chow, Mater. Sci. Forum 679-680 (2011) 595.

5. S. Dhar, A. C. Ahyi, J. R. Williams, S. -H. Ryu and A. Agarwal, Mater. Sci. Forum 717-720 (2012) 713.

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