Affiliation:
1. Rensselaer Polytechnic Institute
Abstract
To study the mobility limiting mechanisms in (0001) 4H-SiC and 6H-SiC MOSFETs, physics based modeling of the inversion mobility of has been done. Two very different limiting mechanisms have been found for 4H-SiC and 6H-SiC MOSFETs. The mobility in 6H-SiC MOSFETs is limited by phonon scattering while the 4H-SiC MOSFET mobility is limited by Coulombic at low electric fields and surface roughness scattering at high electric fields.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. S. Harada, M. Okamoto, T. Yatsuo, K. Adachi, K. Fukuda, and K. Arai, IEEE Electron Device Letters, Vol. 25 (2004), p.292.
2. S. -H. Ryu, S. Krishnaswami, M. Das, B. Hull, J. Richmond, B. Heath,A. Agarwal, J. Palmour, and J. Scofield, in Proc. ISPSD, 2005, p.275.
3. H. Yano, F. Katafuchi, T. Kimoto, and H. Matsunami, IEEE Trans. Electron Devices, Vol. 46(1999), p.504.
4. R. Schorner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Lett., vol. 20, p.241–244, May (1999).
5. N.S. Saks and A.K. Agarwal, Appl. Phys. Lett., vol. 77, pp.3281-3283, Nov. (2000).
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