Affiliation:
1. General Electric Global Research
2. National Institute of Standards and Technology
Abstract
The quality of the SiC/SiO2 interface is critical to the stability and performance of MOS-based SiC power devices. Charge pumping is a flexible interface characterization technique. In this work, a significant portion of the total traps are found to be located in the near-interface oxide using frequency-dependent charge pumping. Oxide trap tunneling mechanisms are discussed, and trap profile as a function of depth is calculated. The trap density is shown to increase exponentially as it gets closer to the interface.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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