Affiliation:
1. Université de Lyon
2. IMB-CNM-CSIC
3. French-German Research Institute of Saint-Louis (ISL)
Abstract
10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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