SiC Power Devices as Enabler for High Power Density - Aspects and Prospects

Abstract

Comparable to silicon the main way to improve the cost performance of SiC power devices is to go up with current density since the main selling point of a power device is its current handling capability. To follow this path successfully a couple of application and system relevant aspects should be taken into account beside the pure focus on reducing nominal or absolute losses at chip level. This paper will address some of those topics in combination with discussing state of the art device technologies on SiC. Also some considerations regarding the operation of SiC devices at elevated temperatures will be given, mainly targeting for increased power density and reduced losses in power electronic systems.