IMPHEAT-II, a novel high temperature ion implanter for mass production of SiC power devices
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Published:2022-12-16
Issue:36
Volume:7
Page:1486-1489
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ISSN:2059-8521
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Container-title:MRS Advances
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language:en
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Short-container-title:MRS Advances
Author:
Kuwata YusukeORCID, Shiojiri Shiro, Nakanishi Akihito, Inoue Shinsuke, Adachi Masakazu, Hirai Yuya, Ueno Koyu, Wang Jian, Uji Nobuhiro, Nagamori Hideo, Masa Johnny, Shirakawa Hiroshi, Yuasa Kensuke, Nakazawa Yoshiyuki, Goto Ryosuke, Hahto Sami, Sacco George, Tamura Shigehisa, Orihira Koichi, Onoda Masatoshi, Hayashi Yoshinobu, Sakamoto Takashi, Zhao Weijiang
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. H. Matsunami, N. Noboru, T. Kimoto, T. Nakamura, Technology of Semiconductor SiC and Its Application (Tokyo, The Nikkan Kogyo Shimbun, 2003), p.14 2. B.J. Baliga, Fundamentals of Power Semiconductor Devices (Springer, New York, 2008), p.15 3. Y. Nakanishi, T. Tominaga, H. Okabe, Y. Suehiro, K. Sugahara, T. Kuroiwa et al., Properties of a SiC Schottky barrier diode fabricated with a thin substrate. Mater. Sci. Forum 778–780, 820–823 (2014) 4. P. Friedrichs, SiC power devices as enabler for high power density- aspects and prospects. Mater. Sci. Forum 778–780, 1104–1109 (2014) 5. W. Zhao, S. Shiojiri, et al., A study on the effect of ion implant to wafer shape and the ion implanter to process the distorted thin SiC wafer, in Proceedings of 22nd International Conference on Ion Implantation, pp. 299–302.
Cited by
2 articles.
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1. The Detailed Analysis of Diffusion Behavior of implanted ions in 4H-SiC;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08 2. Ion implantation-induced damage in 4H-SiC detected by photo-modulated reflectance;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08
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