Evaluation of Degradation due to Electron Irradiation of Si<sub>1-x</sub>C<sub>x</sub> S/D n-type MOSFETs-Reference-Cited by-同舟云学术

Evaluation of Degradation due to Electron Irradiation of Si_1-xC_x S/D n-type MOSFETs

Published:2014-02 Issue: Volume:778-780 Page:1197-1200
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hori Masato¹,Asai Yuki²,Yoneoka Masashi¹,Tsunoda Isao¹,Takakura Kenichiro¹,Nakashima Toshiyuki³,Gonzalez Mireia B.⁴,Simoen Eddy⁵,Claeys Cor⁶

Affiliation:

1. Kumamoto National College of Technology

2. Kyushu University

3. University of Miyazaki

4. Institut de Microelectronica de Barcelona

5. IMEC Interuniversity Microelectronics Center

6. IMEC

Abstract

To solve the problem of the limitation to improve device performance in standard Si integration technologies and to develop radiation-harsh devices, the irradiation effects of Si1-xCx source/drain (S/D) n-type metal oxide semiconductor field effect transistors (n-MOSFETs) have been investigated. It is shown that the drain current and the maximum electron mobility of Si1-xCx n-MOSFETs decrease by electron irradiation. The reduction of the device performance can be explained by the radiation-induced lattice defects in the devices. However, the electron mobility enhancement effect by adding C remained after an electron irradiation up to 5×1017 e/cm2.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.1197.pdf

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1. Thermal recovery process of electron irradiated Si1-xCxsource/drain n-MOSFETs;physica status solidi (c);2015-09-25