Effects of electron irradiation on SiGe devices-Reference-Cited by-同舟云学术

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Effects of electron irradiation on SiGe devices

Published:2010-02 Issue:9 Volume:518 Page:2517-2520
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ohyama H.,Nagano T.,Takakura K.,Motoki M.,Matsuo K.,Nakamura H.,Sawada M.,Kuboyama S.,Gonzalez M.B.,Simoen E.,Eneman G.,Claeys C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions

2. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors

3. Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20 MeV protons

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal recovery process of electron irradiated Si1-xCxsource/drain n-MOSFETs;physica status solidi (c);2015-09-25

2. Evaluation of Degradation due to Electron Irradiation of Si_1-xC_x S/D n-type MOSFETs;Materials Science Forum;2014-02

3. Radiation effects in Si-Ge quantum size structure (Review);Semiconductors;2013-02

4. Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs;Materials Science Forum;2012-07

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