Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si<sub>1-x</sub>Ge<sub>x</sub> S/D p-MOSFETs-Reference-Cited by-同舟云学术

Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si_1-xGe_x S/D p-MOSFETs

Published:2012-07 Issue: Volume:725 Page:235-238
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nakashima Toshiyuki¹,Idemoto Tatsuya²,Tsunoda Isao²,Takakura Kenichiro²,Yoneoka Masashi²,Ohyama Hidenori²,Yoshino Kenji³,Simoen Eddy⁴,Claeys Cor⁵

Affiliation:

1. Chuo Denshi Kogyo Co. Ltd.

2. Kumamoto National College of Technology

3. University of Miyazaki

4. IMEC Interuniversity Microelectronics Center

5. IMEC

Abstract

The effect of 2-MeV electron irradiation of Si1-xGexS/D p-MOSFETs with different gate length and Ge concentration is studied. After electron irradiation, the maximum hole mobility decreases with increasing electron fluence for all gate lengths. In particular, after 5 x 1017e/cm2irradiation, the maximum hole mobility drastically decreases at short channel region for x = 0.3. Furthermore, a negative shift of the threshold voltage is clearly observed. These degradations can be explained both by the lattice defects and the stress relaxation in the Si channel created by atomic displacements.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.725.235.pdf

Reference10 articles.

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