Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders

Abstract

Cryogenic polishing single silicon wafer with nano-sized CeO2 abrasives can be known as cryogenic fixed abrasives CMP (CFA-CMP). The abrasive slurry was made of nano-sized CeO2 particles dispersed in de-ionized water with a surfactant and the polishing slurry froze to form cryogenic polishing pad. Then the polishing tests of the blanket silicon wafers in the presence of the cryogenic polishing pad containing the nano-particulates were carried out. The morphologies and surfaces roughness of the polished silicon wafers were observed and examined on an atomic force microscope (AFM). The results show that a super smooth surface with roughness of 0. 293 nm is obtained within 5000 nm× 5000 nm and the removal of material is dominated by plastic flowage.