Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer-Reference-Cited by-同舟云学术

Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer

Published:2019-02 Issue: Volume:56 Page:119-130
ISSN:1661-9897
Container-title:Journal of Nano Research
language:
Short-container-title:JNanoR

Author:

Vimala Palanichamy¹,Nithin Kumar N.R.¹

Affiliation:

1. Dayananda Sagar College of Engineering

Abstract

In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with & without Hafnium dioxide as high-K dielectric material is employed using Silvaco TCAD Atlas Tool. It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows a better electrical characteristics in comparison with other device structures.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/JNanoR.56.119.pdf

Reference7 articles.

1. Andreas Tsormpatzoglou, Charalabos A. Dimitriadis, Raphael Clerc, G. Pananakakis, and Gerard Ghibaudo, Semi analytical Modeling of Short-Channel Effects in Lightly Doped Silicon Tri gate MOSFETs,, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 10, OCTOBER 2008, pp- 2623-2631.

2. Subhradip Das and Sudakshina Kundu, Simulation to Study the Effect of Oxide Thickness and High-K Dielectric on Drain-Induced Barrier Lowering in N-type MOSFET, IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 12, NO. 6, NOVEMBER,2013, pp.945-947.

3. Sang-Hyeon Kim, Masafumi Yokoyama, Ryosho Nakane, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka, and Shinichi Takagi, High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability,, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 5, MAY 2014, pp-1354 1360.

4. Cong Li, Yiqi Zhuang and Li Zhang, Simulation study on FinFET with tri-material gate,, School of Microelectron.

5. Bin Yu, Leland Chang, Shibly Ahmed, Haihong Wang, Scott Bell, Chih-Yuh Yang, Cyrus Tabery, Chau Ho, Qi Xiang, Tsu-Jae King, Jeffrey Bokor, Chenming Hu, Ming-Ren Lin, and David Kyser, FinFET Scaling to 10nm Gate Length,, Strategic Technology, Advanced Micro Devices, Inc., Sunnyvale, CA 94088, USA (2002).

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Effects in Multi-gate MOSFETs;Handbook of Emerging Materials for Semiconductor Industry;2024

2. A Study of GAA Silicon Nanowire MOSFETs for Better Performance;2023 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT);2023-07-14

3. Efficiency Analysis of Cylindrical CNT MOSFET;2023 International Conference on Advances in Electronics, Communication, Computing and Intelligent Information Systems (ICAECIS);2023-04-19

4. Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance;Micromachines;2023-03-31

5. Analytical Model of Conventional and Rectangular Core-Shell-based Double Gate Junctionless MOS;IETE Journal of Research;2022-11-16