4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates-Reference-Cited by-同舟云学术

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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Published:2000-05 Issue: Volume:338-342 Page:229-232
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kuznetsov N.I.¹,Morozov A.²,Bauman D.²,Ivantsov V.³,Sukhoveyev V.,Nikitina Irina P.⁴,Zubrilov A.S.⁵,Rendakova S.V.⁶,Dmitriev Vladimir⁷,Hofman D.,Vida György⁸

Affiliation:

1. Ioffe Physicotechnical Institute RAS

2. Crystal Growth Research Center

3. WBG Research Group

4. Newcastle University

5. Russian Academy of Sciences

6. TDI, Inc.

7. Technologies and Devices International Inc., TDI

8. Budapest University of Technology and Economics

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.229.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-beam-induced current study of electrically active defects in 4H-SiC;Journal of Physics: Condensed Matter;2003-12-22

2. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers;Materials Science Forum;2003-09

3. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications;Materials Science Forum;2003-09

4. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method;Materials Science Forum;2002-04

5. Specific features of the liquid-phase epitaxial growth of SiC epilayers in vacuum;Semiconductors;2001-10

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