Reliability of 4H-SiC p-n Diodes on LPE Grown Layers-Reference-Cited by-同舟云学术

Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

Published:2003-09 Issue: Volume:433-436 Page:929-932
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sarov G.¹,Kakanakov Roumen¹,Cholakova T.¹,Kassamakova Liliana¹,Hristeva N.¹,Lepoeva G.¹,Philipova P.¹,Kuznetsov N.I.²,Zekentes Konstantinos³

Affiliation:

1. Bulgarian Academy of Sciences

2. Ioffe Physicotechnical Institute RAS

3. Foundation for Research and Technology-Hellas(FORTH)

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.929.pdf

Reference7 articles.

1. H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P.A. Nilsson, J.P. Bergman and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.727.

2. U. Zimmermann, J. Osterman, J. Zhang, A. Henry and A. Hallen, Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001-, Tsukuba, Japan, (2001), p.15.

3. J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.299.

4. A. Galeckas, J. Linros and B. Breitholtz: Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001- , Tsukuba, Japan, (2001), p.59.

5. H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner, C. Hallin: Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001- , Tsukuba, Japan, (2001), p.181.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid Phase Epitaxy of Silicon Carbide;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

2. P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching;Materials Science Forum;2004-06