4H-SiC pn Diode Grown by LPE Method for High-Power Applications
Author:
Affiliation:
1. Ioffe Physicotechnical Institute RAS
2. Crystal Growth Research Center
3. Bulgarian Academy of Sciences
4. Foundation for Research and Technology-Hellas(FORTH)
5. Fatih University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.433-436.867.pdf
Reference6 articles.
1. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns: J. Apll. Phys. Vol. 76 (1994), p.1363.
2. H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P.A. Nilsson, J.P. Bergman and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.727.
3. U. Zimmermann, J. Osterman, J. Zhang, A. Henry and A. Hallen, Techical Digest of Int'l Conf. on SiC and Related Materials - ICSCRM2001-, Tsukuba, Japan, (2001), p.15.
4. J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt and J.P. Skytt: Mater. Sci. Forum Vol. 353-356, (2001), p.299.
5. N. Kuznetsov, A. Morozov, V. Ivantsov, V. Sukhoveev, I. Nikitina, A. Zubrilov, S. Rendakova, V. Dmitriev, D. Hofmann, P. Marsi: Mater. Sci. Forum Vol. 338-342, (2000), p.229.
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