Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

Published:2000-05 Issue: Volume:338-342 Page:1199-1202
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Morrison D.J.¹,Pidduck A.J.²,Moore V.³,Wilding P.J.²,Hilton Keith P.²,Uren Michael J.²,Johnson C. Mark⁴

Affiliation:

1. University of Newcastle

2. QinetiQ Ltd.

3. Defence Evaluation and Research Agency DERA

4. University of Nottingham

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.1199.pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes;Journal of Crystal Growth;2023-04

2. Surface and interface issues in wide band gap semiconductor electronics;Applied Surface Science;2010-07

3. Nanoscale transport properties at silicon carbide interfaces;Journal of Physics D: Applied Physics;2010-05-18

4. Investigation of the 4H–SiC surface;Applied Surface Science;2008-10

5. Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy;Diamond and Related Materials;2006-09

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