Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy-Reference-Cited by-同舟云学术

Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy

Published:2006-09 Issue:9 Volume:15 Page:1472-1477
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Guy O.J.,Doneddu D.,Chen L.,Jennings M.R.,Ackland M.P.,Baylis R.,Holton M.D.,Dunstan P.,Wilks S.P.,Mawby P.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference32 articles.

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3. Periphery protection for silicon carbide devices: state of the art and simulation

4. Nitrogen Ion Implantation into α-SiC Epitaxial Layers

5. Doping of SiC by Implantation of Boron and Aluminum

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2. Chemical Vapor Deposition Carbon Film as a Capping Layer in 4H-SiC Based MOSFETs;Journal of Nanoscience and Nanotechnology;2018-09-01

3. Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures;IEEE Transactions on Semiconductor Manufacturing;2012-11

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