Periphery protection for silicon carbide devices: state of the art and simulation-Reference-Cited by-同舟云学术

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Periphery protection for silicon carbide devices: state of the art and simulation

Published:1997-04 Issue:1-3 Volume:46 Page:210-217
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Planson D.,Locatelli M.L.,Ortolland S.,Chante J.P.,Mitlehner H.,Stephani D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Diamond, SiC and Nitride Wide-Bandgap Semiconductors;Palmour,1994

2. Performance limiting micropipe defects in silicon carbide wafers

3. A 4.5 kV 6H silicon carbide rectifier

4. Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

5. SiC devices: physics and numerical simulation

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1. The performance simulation of the LiH-SiC-based Fast Neutron Detector for harsh environment monitoring using Geant4 and TCAD;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-02

2. Study of Nitrogen Concentration in Silicon Carbide;Journal of Electronic Materials;2013-03-06

3. Theoretical predictions of a bucky-diamond SiC cluster;Nanotechnology;2012-05-17

4. High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination;Materials Science Forum;2011-03

5. Investigation of the 4H–SiC surface;Applied Surface Science;2008-10

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