Investigation of the 4H–SiC surface-Reference-Cited by-同舟云学术

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Investigation of the 4H–SiC surface

Published:2008-10 Issue:24 Volume:254 Page:8098-8105
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Guy O.J.,Lodzinski M.,Teng K.S.,Maffeis T.G.G.,Tan M.,Blackwood I.,Dunstan P.R.,Al-Hartomy O.,Wilks S.P.,Wilby T.,Rimmer N.,Lewis D.,Hopkins J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Polymorphism and Polytypism in Crystals;Verma,1966

2. Commercial SiC device processing: Status and requirements with respect to SiC based power devices

3. Characterization of nanopipes/dislocations in silicon carbide using ballistic electron emission microscopy

4. Investigation of annealing effects on the adsorption of Ni on 4H–SiC (0001) surfaces using scanning tunneling microscopy and spectroscopy

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1. Two-step ALD process for non-oxide ceramic deposition: the example of boron nitride;Journal of Physics: Materials;2024-06-27

2. Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC;Journal of Applied Physics;2024-05-08

3. Bridging the gap between surface physics and photonics;Reports on Progress in Physics;2024-03-06

4. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03

5. A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide;Materials;2021-12-24

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