Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction-Reference-Cited by-同舟云学术

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Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Published:2002-04 Issue: Volume:389-393 Page:195-198
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kojima Kazutoshi¹,Ohno Takaya²,Senzaki Junji¹,Fukuda Kenji¹,Fujimoto Tatsuo³,Katsuno Masakazu³,Ohtani Noboru⁴,Nishio Johji⁵,Masahara Koh²,Ishida Yuuki¹,Takahashi Tetsuo⁶,Suzuki Takaya⁶,Tanaka Tomoyuki²,Yoshida Sadafumi⁷,Arai Kazuo¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. UPR Ultra-Low-Loss Power Device Technology Research Body

3. Nippon Steel Corporation

4. Kwansei Gakuin University

5. Toshiba Corporation

6. National Institute of Advanced Industrial Science and Technology

7. Saitama University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.195.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Carbide Epitaxy;Handbook of Crystal Growth;2015

2. Epitaxial Growth of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26

3. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$ ]- and [0001]-Oriented Silicon Carbide Substrates;Journal of Electronic Materials;2007-03-16

4. Reverse characteristics of pn diodes on 4H–SiC(000-1) C and (11-20) face;Applied Physics Letters;2004-03-08

5. Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face;Applied Physics Letters;2002-10-14

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