Electric properties of carbon-doped n-type β-FeSi<sub>2</sub>/p-type Si heterojunction diodes-Reference-Cited by-同舟云学术

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Electric properties of carbon-doped n-type β-FeSi<sub>2</sub>/p-type Si heterojunction diodes

Published:2015 Issue:0 Volume:3 Page:011101-011101
ISSN:2758-2450
Container-title:JJAP Conference Proceedings
language:en
Short-container-title:JJAP Conf. Proc.

Author:

Takahara Motoki¹,M. Mostafa Tarek¹,Baba Ryuji¹,Funasaki Suguru¹,Shaban Mahmoud²,Promros Nathaporn³,Yoshitake Tsuyoshi¹

Affiliation:

1. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

2. Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt

3. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Road, Bangkok 10520, Thailand

Publisher

The Japan Society of Applied Physics

Link

https://www.jstage.jst.go.jp/article/jjapcp/3/0/3_011101/_pdf

Reference15 articles.

1. M. Suzuno, T. Koizumi, and T. Suemasu, Appl. Phys. Lett. 94, 213509 (2009). http://dx.doi.org/10.1063/1.3147168

2. M. Shaban, K. Nomoto, S. Izumi, and T. Yoshitake, Appl. Phys. Lett. 94, 222113 (2009). http://dx.doi.org/10.1063/1.3151915

3. B. Jalali and S. Fathpour, J. Lightwave Technol. 24, 4600 (2006). http://dx.doi.org/10.1109/JLT.2006.885782

4. M. C. Bost and J. E. Mahan, J. Appl. Phys. 58, 2696 (1985). http://dx.doi.org/10.1063/1.335906

5. J. M. Gay, P. Stocker, and F. Rethore, J. Appl. Phys. 73, 8169 (1993). http://dx.doi.org/10.1063/1.353431

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