p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 μm electroluminescence of 0.4 mW at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3147168
Reference23 articles.
1. Light Emitting Silicon for Microphotonics
2. Light Emitting Silicon for Microphotonics
3. Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type β-FeSi2 bulk
4. Room-Temperature 1.6 µm Electroluminescence fromp+-Si/β-FeSi2/n+-Si Diodes on Si(001) without High-Temperature Annealing
5. Improved Room-Temperature 1.6 µm Electroluminescence fromp-Si/β-FeSi2/n-Si Double Heterostructures Light-Emitting Diodes
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