Room-Temperature 1.6 µm Electroluminescence fromp+-Si/β-FeSi2/n+-Si Diodes on Si(001) without High-Temperature Annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=5/a=051405/pdf
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5. Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
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