Effects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
3. Indirect optical absorption of single crystalline β-FeSi2
4. Optical properties of semiconducting iron disilicide thin films
5. Room-Temperature 1.6 µm Electroluminescence fromp+-Si/β-FeSi2/n+-Si Diodes on Si(001) without High-Temperature Annealing
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1. Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment;Coatings;2021-08-01
2. Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions;Advanced Materials Research;2015-07
3. Mechanism of Carrier Transport in n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions;Advanced Materials Research;2015-07
4. Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography;Advanced Materials Research;2015-05
5. Diode Parameters of Heterojunctions Comprising p-Type Si Substrate and n-Type β-FeSi2 Thin Films;Advanced Materials Research;2014-10
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