Preferred orientation of BaSi<sub>2</sub> thin films fabricated by thermal evaporation
Author:
Affiliation:
1. Center for Crystal Science and Technology, University of Yamanashi, Yamanashi 400-8511, Japan
2. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Publisher
The Japan Society of Applied Physics
Link
https://www.jstage.jst.go.jp/article/jjapcp/5/0/5_011202/_pdf
Reference23 articles.
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4. K. O. Hara, Y. Nakagawa, T. Suemasu, and N. Usami, Jpn. J. Appl. Phys. 54, 07JE02 (2015). https://doi.org/10.7567/JJAP.54.07JE02
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1. Microstructural, electrical, and optoelectronic properties of BaSi2 epitaxial films grown on Si substrates by close-spaced evaporation;Journal of Alloys and Compounds;2023-12
2. Constructing the composition ratio prediction model using machine learning for BaSi2 thin films deposited by thermal evaporation;Japanese Journal of Applied Physics;2023-04-11
3. Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p+-Si Diodes;MRS Advances;2018-01-11
4. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source;Thin Solid Films;2017-08
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