Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method-Reference-Cited by-同舟云学术

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Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method

Published:2007-01 Issue:1-2 Volume:428 Page:22-27
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Kishino Shingo,Imai Tomohiro,Iida Tsutomu,Nakaishi Yoshiaki,Shinada Masato,Takanashi Yoshifumi,Hamada Noriaki

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference22 articles.

1. Semiconducting Silicides;Borisenko,2001

2. Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition

3. Semiconducting Silicides;Ivanenko,2000

4. Semiconductor-metal transition in BaSi2

5. Solid solutions M1−xSrxSi2 (M = Ca, Eu, Ba) and BaSi2−yGey with SrSi2-type structure

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1. Point defects in BaSi2 identified and analyzed by electron paramagnetic resonance, photoluminescence and density functional theory;Acta Materialia;2024-10

2. FORMATION OF Mn4Si7 FILMS BY MAGNETRON SPUTTERING AND A WIDE RANGE OF THEIR THERMOELECTRIC PROPERTIES;ST PETER POLY U J-PH;2023

3. Obtaining higher manganese silicide films with high thermoelectric properties;E3S Web of Conferences;2023

4. Assessing defect-assisted emissions in indirect bandgap BaSi2 by photoluminescence;Journal of Luminescence;2022-12

5. Investigating Defect-Assisted Emission in BaSi₂ by Power Dependent Photoluminescence;2022 IEEE International Conference on Semiconductor Electronics (ICSE);2022-08-15

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