Obtaining higher manganese silicide films with high thermoelectric properties

Abstract

This article provides information about the process of obtaining a Mn4Si7 film by magnetron sputtering, its high thermoelectric properties, and the possibility of using the resulting film in instrument-making production. Using the magnetron sputtering method, a thin Mn4Si7 film was obtained, and the composition and structure were studied by a scanning electron microscope. Two-stage cleaning of the silicon surface was used in work. Resistivity was determined by the four-probe method, thermoelectric properties, by the two-probe method. The bandwidth of the Mn4Si7/SiO2 film was measured on a high-precision spectrometer according to the law of light reflection. It is shown that the thermoelectric power of the Mn4Si7 film increases during the transition from the amorphous state to the nanocrystalline one, which is associated with the selective scattering of charge carriers at the boundaries of nanoclusters and Mn4Si7 on SiO2/Si have high speed and high sensitivity. It is shown that this film can be used in thermal detectors radiation waves in the visible and IR ranges.