New charge pump circuits for high output voltage and large current drivability

Author:

Chung In-Young1,Shin Jongshin2

Affiliation:

1. Dept. of Electronics and Communications, Kwangwoon University

2. Samsung Electronics

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. [1] J. Dickson, “On-chip high-voltage generation in NMOS integrated circuits using an improved voltage multiplier technique, ” IEEE J. Solid-State Circuits, vol. SC-11, no. 3, pp. 374-378, March 1976.

2. [2] J.-H. Choi, S.-I. Cho, M.-H. Park, and Y.-H. Kim, “A paired MOS charge pump for low voltage operation, ” IEICE Trans. Electron., vol. E86-C, no. 5, pp. 859-863, May 2003.

3. [3] J. C. Chen, T. H. Kuo, L. E. Cleverland, C. K. Chung, N. Leong, Y. K. Kim, T. Akaogi, and Y. Kasa, “A 2.7V only 8Mb_16 NOR flash memory, ” in Symp. VLSI Circuits Dig. Tech. Papers, pp. 172-173, June 1996.

4. High-performance 1-Gb-NAND flash memory with 0.12-μm technology

5. A new charge pump without degradation in threshold voltage due to body effect [memory applications]

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2. A hybrid input charge-pump using micropower thermoelectric generators;IEEJ Transactions on Electrical and Electronic Engineering;2012-05-09

3. Design of a Dickson-type adder/subtractor DC-DC converter;Energy Procedia;2012

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