High-performance 1-Gb-NAND flash memory with 0.12-μm technology-Reference-Cited by-同舟云学术

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High-performance 1-Gb-NAND flash memory with 0.12-μm technology

Published:2002-11 Issue:11 Volume:37 Page:1502-1509
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

June Lee ,Heung-Soo Im ,Dae-Seok Byeon ,Kyeong-Han Lee ,Dong-Hyuk Chae ,Kyong-Hwa Lee ,Sang Won Hwang ,Sung-Soo Lee ,Young-Ho Lim ,Jae-Duk Lee ,Jung-Dal Choi ,Young-Il Seo ,Jong-Sik Lee ,Kang-Deog Suh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22413/01046095.pdf?arnumber=1046095

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2019-08

2. PMOS-switching dual-path charge pump in standard twin-well CMOS technology;International Journal of Electronics;2010-03

3. Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses;Japanese Journal of Applied Physics;2009-06-22

4. New charge pump circuits for high output voltage and large current drivability;IEICE Electronics Express;2009

5. High-Voltage Analog System for a Mobile NAND Flash;IEEE Journal of Solid-State Circuits;2008

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