Design of an Ultra-Wideband High-Efficiency Power Amplifier Based on Multi-paths Impedance Matching Structure
Author:
Affiliation:
1. Key Lab of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University
2. Nanjing University of information Science & Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_21.20240373/_pdf
Reference30 articles.
1. [1] Z. Popovi: “Amping Up the PA for 5G: Efficient GaN Power Amplifiers with Dynamic Supplies,” IEEE Microwave Mag 18 (2017) 137 (DOI: 10.1109/MMM.2017.2664018).
2. [2] K. KUNIHIRO, et al.: “High Efficiency Power Amplifiers for Mobile Base Stations: Recent Trends and Future Prospects for 5G,” IEICE Tran. Electro E101-A (2018) 374 (DOI: 10.1587/transfun.E 101.A.374).
3. [3] Z. Zhang, et al.: “Design of a broadband high-efficiency Doherty power amplifier for 5G communication systems,” IEICE Electron. Express 16 (2019) 20190317 (DOI: /10.1587/elex.16.20190371).
4. [4] C. Liu, et al.: “High-efficiency class E/F3 power amplifiers with extended maximum operating frequency,” IEICE Electron. Express 15 (2018) 20180503 (DOI: 10.1587/elex.15.20180503).
5. [5] C. C. Rong, et al.: “A broadband microwave GaN HEMTs class EF3 power amplifier with π-type network,” IEICE Electron. Express 14 (2017) 20170260 (DOI: 10.1587/elex.14.20170260).
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