A broadband microwave GaN HEMTs class EF3 power amplifier with π-type network
Author:
Affiliation:
1. School of Electronic Engineering, University of Electronic Science and Technology of China
2. School of Physics and Electronic Information, Gannan Normal University
3. School of Electronics Engineering and Computer Science, Peking University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/14/9/14_14.20170260/_pdf
Reference17 articles.
1. [1] A. Grebennikov, et al.: Switch RF and Microwave Power Amplifiers (Elsevier, Oxford, UK, 2012) 2nd ed.
2. [2] X. Yuet al.: “C-band 60 W GaN power amplifier MMIC designed with harmonic tuned approach,” Electron. Lett. 52 (2016) 219 (DOI: 10.1049/el.2015.3017).
3. [3] K. Narendra and T. YewKok: “A design technique to improve harmonic suppression in high efficiency wideband Class E RF power amplifier,” IEICE Electron. Express 11 (2014) 20130824 (DOI: 10.1587/elex.11.20130824).
4. [4] O. Kizilbey: “Highly efficient 2.7–2.9 GHz class-F and inverse class-F power amplifiers in GaN HEMT technology,” IEICE Electron. Express 10 (2013) 20130132 (DOI: 10.1587/elex.10.20130132).
5. [5] M. Thianet al.: “High-efficiency harmonic-peaking class-EF power amplifiers with enhanced maximum operating frequency,” IEEE Trans. Microw. Theory Techn. 63 (2015) 659 (DOI: 10.1109/TMTT.2014.2386327).
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