Design of a broadband high-efficiency Doherty power amplifier for 5G communication systems
Author:
Affiliation:
1. Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/16/14/16_16.20190371/_pdf
Reference30 articles.
1. [1] J. Moon, et al.: “Efficiency enhancement of Doherty amplifier through mitigation of the knee voltage effect,” IEEE Trans. Microw. Theory Techn. 59 (2011) 143 (DOI: 10.1109/TMTT.2010.2091207).
2. [2] T. Sharma, et al.: “Broadband GaN class-E power amplifier for load modulated delta sigma and 5G transmitter applications,” IEEE Access 6 (2018) 4709 (DOI: 10.1109/ACCESS.2017.2789248).
3. [3] X.-H. Fang, et al.: “Modified Doherty amplifier with extended bandwidth and back-off power range using optimized peak combining current ratio,” IEEE Trans. Microw. Theory Techn. 66 (2018) 5347 (DOI: 10.1109/TMTT.2018.2870443).
4. [4] S. Y. Zheng, et al.: “Design of ultrawideband high-efficiency extended continuous class-F power amplifier,” IEEE Trans. Ind. Electron. 65 (2018) 4661 (DOI: 10.1109/TIE.2017.2772163).
5. [5] J. Kim, et al.: “Power efficiency and linearity enhancement using optimized asymmetrical Doherty power amplifiers,” IEEE Trans. Microw. Theory Techn. 59 (2011) 425 (DOI: 10.1109/TMTT.2010.2086466).
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