On the performance characterization of silicon MOSFETs on 4° off-axis substrate-Reference-Cited by-同舟云学术

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On the performance characterization of silicon MOSFETs on 4° off-axis substrate

Published:2016 Issue:17 Volume:13 Page:20160634-20160634
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Qin Guoxuan¹,Liu Hao¹,Guo You¹,Dang Mengjiao¹,Ma Jianguo¹,Ma Zhenqiang²,Luo Tao³

Affiliation:

1. School of Electronic Information Engineering, Tianjin University

2. Department of Electrical and Computer Engineering, University of Wisconsin-Madison

3. School of Computer Science and Technology, Tianjin Key Laboratory of Cognitive Computing and Application, Tianjin University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/13/17/13_13.20160634/_pdf

Reference19 articles.

1. [1] R. Fischeret al.: “Material properties of high-quality GaAs epitaxial layers grown on Si substrates,” J. Appl. Phys. 60 (1986) 1640 (DOI: 10.1063/1.337253).

2. [2] N. D. Nguyenet al.: “Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications,” ECS Trans. 33 (2010) 933 (DOI: 10.1149/1.3487625).

3. [3] C. Lunceford and J. Drucker: “Characterization of epitaxially grown indium islands on Si(111),” J. Vac. Sci. Technol. A 30 (2012) 061509 (DOI: 10.1116/1.4764049).

4. [4] H. Katariaet al.: “Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon,” IEEE J. Sel. Top. Quantum Electron 20 (2014) 380. Papers (2012) 484 (DOI: 10.1109/JSTQE.2013.2294453).

5. [5] G. Wanget al.: “Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates,” J. Cryst. Growth 315 (2011) 32 (DOI: 10.1016/j.jcrysgro.2010.07.039).

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