Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education
Author:
Affiliation:
1. Yamagata University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/transele/E93.C/1/E93.C_1_108/_pdf
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1. Operation Mechanism on SiGe∕Si∕Si PIN Diodes Explained Using Numerical Simulation
2. Junction Surface Treatment for High-Breakdown-Voltage SiGe∕Si Diodes
3. Fast-Recovery Pin Diodes with SiGe Anode Layers
4. Ideal hydrogen termination of the Si (111) surface
5. [5] B.J. Baliga, Power Semiconductor Devices, PWS Publishing, 1996.
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1. Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor;Applied Physics Letters;2012-01-09
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