Junction Surface Treatment for High-Breakdown-Voltage SiGe∕Si Diodes-Reference-Cited by-同舟云学术

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Junction Surface Treatment for High-Breakdown-Voltage SiGe∕Si Diodes

Published:2006 Issue:3 Volume:9 Page:G73
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Hirose Fumihiko,Kurita Kazunari,Takahashi Yutaka

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference9 articles.

1. Oxidation studies of SiGe

2. Plasma assisted oxidation of SiGe layers at 500°C: interface characterization

3. Oxidation of Si1−xGexalloys at atmospheric and elevated pressure

4. Ultraviolet ozone induced oxidation of epitaxial Si1−xGex(111)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education;IEICE Transactions on Electronics;2010

2. Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopy;Thin Solid Films;2008-11

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