Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3675863
Reference10 articles.
1. Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
2. Determination of grain boundary impurity effects in polycrystalline silicon
3. Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
4. Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor
5. The electrical properties of polycrystalline silicon films
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1. Structural measurement of electron-phonon coupling and electronic thermal transport across a metal-semiconductor interface;Scientific Reports;2022-10-05
2. Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering;Applied Physics Letters;2018-07-16
3. Ab initio and atomistic simulation of local structure and defect segregation on the tilt grain boundaries in silicon;Journal of Applied Physics;2015-10-07
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