Ab initio and atomistic simulation of local structure and defect segregation on the tilt grain boundaries in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4932203
Reference58 articles.
1. Basic grain‐boundary effects in polycrystalline heterostructure solar cells
2. The electrical properties of polycrystalline silicon films
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4. Precipitation of iron in multicrystalline silicon during annealing
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1. Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth;Crystal Growth & Design;2023-03-23
2. Exploring silicon [0 0 1] small angle symmetric tilt grain boundaries: Structures, energies and stress fields;Applied Surface Science;2022-10
3. Revealing the role of Σ3{112} Si grain boundary local structures in impurity segregation;Journal of Applied Physics;2022-08-28
4. Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model;Journal of Applied Physics;2022-07-14
5. Introduction;Springer Theses;2022
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